APTGT150SK120D1G APTGT150SK120D1G ? rev 2 december, 2009 www.microsemi.com 1-4 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 220 i c continuous collector current t c = 80c 150 i cm pulsed collector current t c = 25c 300 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 690 w rbsoa reverse bias safe operating area t j = 125c 300a @ 1100v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com 2 1 5 q1 3 4 v ces = 1200v i c = 150a @ tc = 80c application ? ac and dc motor control ? switched mode power supplies features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? high level of integration ? m5 power connectors benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? rohs compliant buck chopper trench + field stop igbt power module
APTGT150SK120D1G APTGT150SK120D1G ? rev 2 december, 2009 www.microsemi.com 2-4 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 150a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 6 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 10.8 c oes output capacitance 0.56 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.5 nf q g gate charge v ge =15v, i c =150a v ce =600v 1.4 c t d(on) turn-on delay time 250 t r rise time 90 t d(off) turn-off delay time 550 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 150a r g = 4.7 130 ns t d(on) turn-on delay time 300 t r rise time 100 t d(off) turn-off delay time 650 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 150a r g = 4.7 180 ns e on turn on energy t j = 125c 11 e off turn off energy v ge = 15v v bus = 600v i c = 150a r g = 4.7 t j = 125c 26 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 125c 600 a chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 150 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 150a v ge = 0v t j = 125c 1.6 v t j = 25c 250 t rr reverse recovery time t j = 125c 350 ns t j = 25c 15 q rr reverse recovery charge t j = 125c 29 c t j = 25c 7 e rr reverse recovery energy i f = 150a v r = 600v di/dt =3000a/s t j = 125c 12 mj
APTGT150SK120D1G APTGT150SK120D1G ? rev 2 december, 2009 www.microsemi.com 3-4 thermal and package characteristics symbol characteristic min typ max unit igbt 0.18 r thjc junction to case thermal resistance diode 0.34 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c for terminals m5 2 3.5 torque mounting torque to heatsink m6 3 5 n.m wt package weight 180 g d1 package outline (dimensions in mm) typical performance curve forward characteristic of diode t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 10 50 90 130 170 210 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector curren t maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode
APTGT150SK120D1G APTGT150SK120D1G ? rev 2 december, 2009 www.microsemi.com 4-4 output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 250 300 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 50 100 150 200 250 300 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff err 0 10 20 30 40 50 60 0 50 100 150 200 250 300 i c (a) e (mj) v ce = 600v v ge = 15v r g = 4.7 ? t j = 125c eon eon eoff err 0 10 20 30 40 50 4 8 12 16 20 24 28 32 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 150a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 300 350 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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